SEMICONDUCTOR DEVICE, METHOD FOR GENERATING SEMICONDUCTOR DEVICE PATTERN, METHOD FOR SEMICONDUCTOR DEVICE, AND PATTERN GENERATOR FOR SEMICONDUCTOR DEVICE

摘要

The realization of a circuit stable action by efficiently absorbing power source noise. This invention is characterized by having a MOS structure bypass capacitor having a gate electrode so formed as to extend from a power source wiring region down to a vacant region adjacent to the power source wiring region and free of another functional layer and formed over one conductivity type diffused region via a capacitor insulation film, and a substrate contact formed under a ground wiring region and fixing a substrate potential. This invention is also characterized in that the bypass capacitor has a contact that contacts the power source wiring in the surface of the gate electrode, and in that the one conductivity type diffused region is connected to the substrate contact diffused region.