<p>A structure including a grating (43) and a semiconductor nanocrystal layer o n the grating (43), can be a laser (10). The semiconductor nanocrystal layer c an include a plurality of semiconductor nanocrystals (32) including a Group II- VI, the nanocrystals (32) being distributed in a metal oxide matrix (33). Th e grating (43) can have a periodicity from 200 nm to 500 nm.</p>
申请公布号
CA2467005(A1)
申请公布日期
2003.05.30
申请号
CA20022467005
申请日期
2002.11.18
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
KLIMOV, VICTOR I.;BAWENDI, MOUNGI G.;SMITH, HENRY I.;WALSH, MICHAEL E.;EISLER, HANS J.;SUNDAR, VIKRAM C.
