SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics of a transistor and high reliability in the device having an electric circuit using field-effect transistors desired to have the same characteristics. SOLUTION: The width of a groove of isolating adjacent shallow groove elements actively forming a desired transistor having the same characteristics is set to the same as the transistors so that stresses generated actively by the adjacent shallow groove element isolation become the same in the transistors, thereby providing the effect of obtaining the transistors having the same characteristics.