METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To sufficiently keep the adherence of an insulating film and an electrode or wiring and to prevent drop of the dielectric constant of a capacitative element. SOLUTION: A metal layer 7A is formed on a third interlayer insulating film 5 where recessed parts 6 for forming capacitive elements are formed. The metal layer 7A is oxidized by washing. Thus, an adhesion layer 7 constituted of the sufficiently oxidized metal layer 7A is formed. Then, a Pt film 8A becoming the lower electrode of the capacitive element is formed on the adhesion layer 7.