| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reticle for electron beam exposure and a reticle blank for electron beam demagnification exposure wherein warp is very small and generation of position distortion due to blank can be reduced, and to provide its manufacturing method. SOLUTION: The manufacturing method of a reticle blank of electron beam exposure which reticle blank is constituted of a silicon membrane and a thick silicon substrate having struts for retaining the membrane is provided with a step for preparing a thick silicon retaining substrate of 1-5 mm in thickness and working it to dispose the struts, a step for preparing an SOI wafer constituted of an active layer, a BOX layer and a retaining wafer, a step for sticking a surface of the active layer of the SOI wafer to the thick silicon retaining substrate having the struts, a step for eliminating the retaining wafer, and a step for eliminating the BOX layer.</p> |
