| 摘要 |
PROBLEM TO BE SOLVED: To propose a ferroelectric capacitor having a hysteresis loop capable of actually operating a single matrix ferroelectric memory and device configuration, and to realize the single matrix ferroelectric memory. SOLUTION: The ferroelectric memory is constituted so that the ferroelectric capacitor is formed of a lower electrode, a ferroelectric thin-film and an upper electrode, the lower electrode is used as the first signal electrode, an inter-layer insulating film is formed on the ferroelectric capacitor, a through-hole is formed to the inter-layer insulating film and the upper electrode for the ferroelectric capacitor is connected to the second signal electrode through the through-hole.
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