| 摘要 |
PROBLEM TO BE SOLVED: To provide an edge input pin photodiode in which characteristic of a quick operation is not degraded, even if the intensity of incident light is increased. SOLUTION: An edge input photodiode 10 is provided with a laminate in which an intrinsic semiconductor 16 is formed between p-n junction layers 14, 15 comprising n-type and p-type semiconductors containing InGaAsP. The intrinsic semiconductor 16 is made of InGaAsP in order to control the absorption coefficient of the absorption layer, for the purpose of increasing a light- absorption region in the intrinsic semiconductor layer 16 in the depth direction from a photo-detecting edge 20.
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