发明名称 LASER IRRADIATION DEVICE AND LASER IRRADIATION METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a laser irradiation device for forming laser beams for which energy density distribution on an irradiation plane is uniform and a laser irradiation method using it, and to provide a method for manufacturing a semiconductor device by using a semiconductor film obtained by crystallizing the semiconductor film and activating impurity elements by such a laser irradiation method. SOLUTION: The laser irradiation device is provided with a laser and two or more mirrors having a concave surface for uniformizing an energy density of the laser beam emitted from the laser in one direction. A focus position of a first mirror is present between the first mirror and the irradiation plane, and the focus position of a second mirror is not present between the second mirror and the irradiation plane but is present behind the irradiation plane. Then, by such a laser irradiation device, the semiconductor film or the like is irradiated with the laser.</p>
申请公布号 JP2003158088(A) 申请公布日期 2003.05.30
申请号 JP20010359395 申请日期 2001.11.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO;MORIWAKA TOMOAKI
分类号 B23K26/06;B23K26/067;B23K26/073;B23K101/40;G02B5/09;G02B27/09;G09F9/00;H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 B23K26/06
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