发明名称 |
LASER IRRADIATION DEVICE AND LASER IRRADIATION METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a laser irradiation device for forming laser beams for which energy density distribution on an irradiation plane is uniform and a laser irradiation method using it, and to provide a method for manufacturing a semiconductor device by using a semiconductor film obtained by crystallizing the semiconductor film and activating impurity elements by such a laser irradiation method. SOLUTION: The laser irradiation device is provided with a laser and two or more mirrors having a concave surface for uniformizing an energy density of the laser beam emitted from the laser in one direction. A focus position of a first mirror is present between the first mirror and the irradiation plane, and the focus position of a second mirror is not present between the second mirror and the irradiation plane but is present behind the irradiation plane. Then, by such a laser irradiation device, the semiconductor film or the like is irradiated with the laser.</p> |
申请公布号 |
JP2003158088(A) |
申请公布日期 |
2003.05.30 |
申请号 |
JP20010359395 |
申请日期 |
2001.11.26 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA KOICHIRO;MORIWAKA TOMOAKI |
分类号 |
B23K26/06;B23K26/067;B23K26/073;B23K101/40;G02B5/09;G02B27/09;G09F9/00;H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 |
主分类号 |
B23K26/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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