| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which is kept high in pattern accuracy, improved in sensitivity, and manufactured at a low cost with high yield through a simple process by improving itself in rate of hole area. SOLUTION: A MIS sensor S11 and a thin film transistor T11 are combined on a substrate for the formation of a two-dimensional photoelectric conversion device. The MIS sensor S11 is laminated on the thin film transistor T11, and a semiconductor layer 507 provided to the MIS sensor S11 is extended on the thin film transistor T11. By this constitution, the full area of a pixel is utilized as a window, and the photoelectric conversion device can be improved in rate of hole area and made simple in manufacturing process.
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