| 摘要 |
PROBLEM TO BE SOLVED: To suppress precipitation of reactants due to temperature decline of a non-reactant gas, and to prevent degradation of quality of a semiconductor wafer due to generation of particles. SOLUTION: For a treatment apparatus 100, a hollow dome-like external reactor core pipe 112 whose inside is to be used as a reaction chamber 111 is mounted on a base 110, and a cylindrical internal core pipe 114 having a diameter smaller than the diameter of the external core pipe 112 is provided inside the external core pipe 112 by a flange 113 provided on the base. Further, in order to heat the external core pipe 112 and the reaction chamber 111, a plurality of heaters 115a, 115b and 115c are disposed between the external core chamber 112 and a cover 102. A reactant gas discharge port 125 for discharging a used gas to the outside is provided on a position 112a of the external core chamber 112 corresponding to a clearance between the heaters 115b and 115c.
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