METHOD FOR CLEANING METAL FILM DEPOSITION SYSTEM, AND METAL FILM DEPOSITION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a cleaning method for carrying out cleaning for the removal of matter adhering to the inner-peripheral surface of a chamber owing to film deposition treatment. SOLUTION: Hydrogen-gas plasma is formed in the space facing the adhering matter 26 on the substrate 3 side of the chamber 1 by electrifying a plasma antenna 23 for cleaning to reduce the adhering matter 26. Subsequently, in a state where the adhering matter 26 is held at a temperature higher than the ambient temperature, Cl2 -gas plasma is formed in the above part, by which the adhering matter 26 can be etched by means of the Cl2 -gas plasma and removed.