| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which leak current is suppressed and its fabricating method. SOLUTION: An N type epitaxial layer 3 is formed on a P type silicon substrate 1. Trenches 6a and 6b are made through the N type epitaxial layer 3 to reach a specified depth of the P type silicon substrate 1. Thermal oxide films 9a and 9b are formed on the sidewall of the trenches 6a and 6b. Polysilicon 10a, 10b is formed to fill the trenches 6a and 6b. The thermal oxide films 9a and 9b are formed from the bottom to the opening end of the trenches 6a and 6b with a substantially constant film thickness so that no stress is imparted to the N type epitaxial layers 3a-3c.
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