发明名称 COMPLEMENTARY BIT PCRAM (PROGRAMMABLE CONDUCTOR RAM) AND METHOD OF OPERATION
摘要 <p>A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the high and low resistance elements to determine the resistance state of an element being read.</p>
申请公布号 WO2003044802(A2) 申请公布日期 2003.05.30
申请号 US2002037227 申请日期 2002.11.20
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