| 摘要 |
PROBLEM TO BE SOLVED: To improve luminous efficiency and reliability of a nitride semiconductor device chip containing a plurality of light emitting elements which can generate light different in wavelength, and to provide a multicolor light emitting device chip with a small number of processes. SOLUTION: The nitride semiconductor light emitting device chip contains a plurality of nitride semiconductor light emitting elements containing a plurality of nitride semiconductor layers (31, 41, 51, 61, 71, etc.), which are laminated above the same main surface of the same retaining plate (1). The light emitting elements contain active layers (51, 52, 53) different in thickness, and generate lights different in wavelength. |
