| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for embodying a power management semiconductor device and an analog semiconductor device which are inexpensive and manufactured in a short period, and can operate on a low voltage, has small power consumption and high driving capability, and can operate fast. SOLUTION: The conductivity of the gate electrode of a CMOS is of a P type unipolar polycrystalline silicon or P type policide structure. A PMOS can have a shorter channel and a lower threshold voltage because of its surface channel type and a buried type NMOS can also have an extremely shallow buried channel and easily has a shorter channel and a lower threshold voltage since arsenic having a small diffusion efficient can be used as an impurity for threshold control. Further, a high-precision voltage divider circuit is obtained by composing the resistors of other polycrystalline silicon different from the gate for the voltage divider circuit and a CR circuit, electrode, so the high-speed power management semiconductor and analog semiconductor can be embodied.
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