| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor for which characteristics are con trolled on a substrate. SOLUTION: A semiconductor film formed on the substrate is crystallized by a continuous oscillation type laser. A scanning direction of the continuous oscillation type laser and a crystallizing direction match. By adjusting the crystallizing direction and a charge moving direction of the thin film transistor, the characteristics of the thin film transistor are controlled. Also, for a laser processor which crystallizes the semiconductor film, a beam shape of a laser oscillated from the continuous oscillation type laser is formed into an elliptic shape by a cylindrical lens, the cylindrical lens is rotatable, the laser beam is scanned on the substrate by a galvano-mirror, and the laser beam is focused on the substrate by an f-θlens.
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