| 摘要 |
PROBLEM TO BE SOLVED: To provide an interlayer insulating film of a low dielectric constant even at a low heat treatment temperature for heat-treating the applied film of a polysiloxane system, which is formed on a substrate. SOLUTION: The applied film obtained by applying the chemical of the polysiloxane system where a functional group selected from a methyl group, a phenyl group and a vinyl group is connected to a silicon atom is set to be an object. The substrate where the applied film is formed is placed in an ammonia gas atmosphere and the heating atmosphere of 300 to 400 deg.C. Thus, the applied film is burnt and the interlayer insulating film of the low dielectric constant is obtained. When only ammonia gas is supplied, the minute amount of water and ammonia which exist in a reaction container become catalysts, and they are considered to drop the activation energy of burning reaction. The small amount of water can be supplied from outside in addition to ammonia gas. |
