发明名称 |
Isolating trench and manufacturing process |
摘要 |
An isolation trench formed in a semiconductor substrate has side walls and a bottom wall. Spacers are on the side walls and face each other for forming a narrow channel therebetween. The bottom wall and the spacers are coated with an electrically insulating material for delimiting a closed empty cavity in the channel. The isolation trench is applicable to the manufacture of integrated circuits.
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申请公布号 |
US2003098493(A1) |
申请公布日期 |
2003.05.29 |
申请号 |
US20020272444 |
申请日期 |
2002.10.16 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
MARTY MICHEL;LEVERD FRANCOIS;CORONEL PHILIPPE;TORRES JOAQUIN |
分类号 |
H01L21/762;H01L21/764;(IPC1-7):H01L21/823;H01L29/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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