发明名称 |
Method of forming a semiconductor device with a multi-layer WSix film with small grain size structure, and a semiconductor device having a polysilicon layer with a multi-layer WSix film formed thereon |
摘要 |
A method of forming a semiconductor device with a polysilicon layer having a multi-layer tungsten-silicide (WSix) film formed on a surface thereof includes the steps of (1) forming a first layer of tungsten-silicide on the surface of the polysilicon layer; (2) forming a second layer of a material selected from tungsten and silicon on the first layer; (3) forming a third layer of tungsten-silicide on the second layer; and (4) thermally treating the multi-layer film resulting from steps (a)-(c) to form a multi-layer WSix film on the surface of the polysilicon layer, the multi-layer WSix film having a uniform small grain size. In various embodiments, steps (1)-(3) may be repeated one or more times. A semiconductor device includes a semiconductor body having a polysilicon layer formed on a surface thereof and a multilayered WSix film formed on a surface of the polysilicon layer by the process described above.
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申请公布号 |
US2003100184(A1) |
申请公布日期 |
2003.05.29 |
申请号 |
US20020301707 |
申请日期 |
2002.11.22 |
申请人 |
WU HSIAO-CHE |
发明人 |
WU HSIAO-CHE |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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地址 |
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