发明名称 Method for manufacturing a low-profile semiconductor device
摘要 A method for manufacturing a semiconductor device includes the steps of forming a first conductive bump on a substrate, forming a second conductive bump on a semiconductor chip, forming a plurality of spaced apart dielectric supporting pads on one of the substrate and the semiconductor chip, mounting the semiconductor chip on the substrate to confine therebetween a gap, bonding together the first and second conductive bumps, and forming an insulating layer that fills in the gap and that encapsulates the supporting pads and the first and second conductive bumps.
申请公布号 US2003098471(A1) 申请公布日期 2003.05.29
申请号 US20030338986 申请日期 2003.01.08
申请人 SHEN MING-TUNG;CHEN I-MING 发明人 SHEN MING-TUNG;CHEN I-MING
分类号 H01L21/60;(IPC1-7):H01L31/032 主分类号 H01L21/60
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