发明名称 Thin film forming method, solution and apparatus for use in the method, and electronic device fabricating method
摘要 The present invention provides a method that is capable of crystallizing a very small amount of solution arranged on a substrate at a predetermined position. By ejecting a solution prepared by dissolving a thin film forming material in a solvent using an ink jet method, droplets of the solution are arranged on the substrate. Crystalline nuclei are created in the solution by controlling a partial pressure of a gas made up of the same components as those of the solvent in the vicinity of the droplets immediately after being arranged to, e.g., a value equal to or substantially equal to the saturation vapor pressure. After creation of the crystalline nuclei, the partial pressure of the gas in the vicinity of the droplets is reduced.
申请公布号 US2003099774(A1) 申请公布日期 2003.05.29
申请号 US20020267639 申请日期 2002.10.10
申请人 SEIKO EPSON CORPORATION 发明人 MORII KATSUYUKI;MASUDA TAKASHI
分类号 C30B7/00;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):B05D3/04;B05C5/00 主分类号 C30B7/00
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