发明名称 |
Method for manufacturing a semiconductor device |
摘要 |
A method for manufacturing a semiconductor device wherein a contact hole formed in an interlayer insulating film on a semiconductor substrate is filled with a plug for electrically connecting an overlying conductor layer with an underlying conductor layer. The plug fills the contact hole, and comprised a tungsten film the upper end whereof is positioned below the upper surface of the interlayer insulating film, and a tungsten film which is filled on the tungsten film in the contact hole and the upper surface whereof is on substantially the same level as the upper surface of the interlayer insulating film.
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申请公布号 |
US2003100178(A1) |
申请公布日期 |
2003.05.29 |
申请号 |
US20020192629 |
申请日期 |
2002.07.11 |
申请人 |
KAMOSHIMA TAKAO;MATSUOKA TAKERU;YAMASHITA TAKASHI |
发明人 |
KAMOSHIMA TAKAO;MATSUOKA TAKERU;YAMASHITA TAKASHI |
分类号 |
H01L23/522;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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