| 发明名称 |
Forming defect prevention trenches in dicing streets |
| 摘要 |
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw.
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| 申请公布号 |
US2003100143(A1) |
申请公布日期 |
2003.05.29 |
| 申请号 |
US20010997086 |
申请日期 |
2001.11.28 |
| 申请人 |
MULLIGAN ROSE A.;HE JUN;MARIEB THOMAS;MENEZES SUSANNE;TOWLE STEVEN |
发明人 |
MULLIGAN ROSE A.;HE JUN;MARIEB THOMAS;MENEZES SUSANNE;TOWLE STEVEN |
| 分类号 |
B23K26/40;H01L21/00;H01L21/301;H01L21/304;H01L21/44;H01L21/78;H01L23/00;(IPC1-7):H01L21/44 |
主分类号 |
B23K26/40 |
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