| 发明名称 |
Method of manufacturing semiconductor device |
| 摘要 |
Before polishing an insulating interlayer film by a CMP process, conductor plugs as erosion-inducing portions are formed on a convex surface of the film. Erosion occurs in the convex surface upon the CMP process, and the residual-free flat surface of insulating interlayer film can be obtained.
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| 申请公布号 |
US2003100177(A1) |
申请公布日期 |
2003.05.29 |
| 申请号 |
US20020207157 |
申请日期 |
2002.07.30 |
| 申请人 |
TAKEWAKA HIROKI;FUJIKI NORIAKI;IZUMITANI JUNKO |
发明人 |
TAKEWAKA HIROKI;FUJIKI NORIAKI;IZUMITANI JUNKO |
| 分类号 |
H01L21/3205;H01L21/304;H01L21/768;(IPC1-7):H01L21/476;H01L21/302 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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