发明名称 |
Circuit for protecting bipolar transistor against thermal damage has resistance connected to base of bipolar transistor and capacitor connected in parallel with resistance |
摘要 |
The circuit has a resistance (R1-RN) connected to the base of the bipolar transistor (T1-Tn) and a capacitor (C1-CN) connected in parallel with the resistance. The bipolar transistor has a negative base-emitter threshold temperature coefficient and the circuit acts as a frequency-selective load circuit. AN Independent claim is also included for the following: an amplifier circuit with a bipolar transistor and an inventive circuit.
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申请公布号 |
DE10155100(A1) |
申请公布日期 |
2003.05.28 |
申请号 |
DE20011055100 |
申请日期 |
2001.11.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
FORSTNER, HANS PETER |
分类号 |
H03F1/52;H03K17/08;(IPC1-7):H03K17/081;H03K17/60 |
主分类号 |
H03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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