发明名称 Circuit for protecting bipolar transistor against thermal damage has resistance connected to base of bipolar transistor and capacitor connected in parallel with resistance
摘要 The circuit has a resistance (R1-RN) connected to the base of the bipolar transistor (T1-Tn) and a capacitor (C1-CN) connected in parallel with the resistance. The bipolar transistor has a negative base-emitter threshold temperature coefficient and the circuit acts as a frequency-selective load circuit. AN Independent claim is also included for the following: an amplifier circuit with a bipolar transistor and an inventive circuit.
申请公布号 DE10155100(A1) 申请公布日期 2003.05.28
申请号 DE20011055100 申请日期 2001.11.09
申请人 INFINEON TECHNOLOGIES AG 发明人 FORSTNER, HANS PETER
分类号 H03F1/52;H03K17/08;(IPC1-7):H03K17/081;H03K17/60 主分类号 H03F1/52
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