METHOD FOR FABRICATING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a thin film transistor(TFT) is provided to prevent a characteristic from being deteriorated by implanting a hydrogen component except impurities into a channel layer in implanting impurities into a semiconductor layer in a P-type TFT area or an N-type TFT area while using a gate as a mask after generating the impurities through an ion shower method. CONSTITUTION: A semiconductor layer is formed on a conductive TFT area of a substrate(30). A gate insulation layer(32) and a conductive layer(33) are sequentially formed on the substrate including the semiconductor layer. A photoresist layer pattern(34) closing the center of the semiconductor layer is formed on the conductive layer. An ion implantation process is performed through an ion shower method using the photoresist layer pattern as a mask to form a source/drain region in the semiconductor layer at both sides of the gate.