FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A field effect transistor(FET) is provided to control the density of electrons formed in a channel by forming a stress deriving layer on a channel layer of the FET such that the stress deriving layer has a lattice constant different from that of the channel layer. CONSTITUTION: The channel layer(15) is formed on a substrate(20). A barrier layer(14) is formed on the channel layer. The stress deriving layer(13) controls the stress of the barrier layer, formed on the barrier layer and having a lattice constant different from that of the barrier layer. A passivation layer is formed on the stress deriving layer. The channel layer is a GaN layer. The barrier layer is an AlxGa1-xN layer.