| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee an excellent characteristic of the capacitor by making a diffusion barrier layer effectively prevent the diffusion of oxygen generated during a high dielectric layer process. CONSTITUTION: A diffusion barrier layer(20) composed of ruthenium, titanium and nitrogen elements is formed on a substrate(10). An annealing process is performed on the diffusion barrier layer. A lower electrode(30), a dielectric(40) and an upper electrode(50) are stacked on the diffusion barrier layer. The diffusion barrier layer is fabricated at a temperature scope of 100-900 deg.C through a metal organic chemical vapor deposition(MOCVD) method, having 200-1000 angstrom in thickness.
|
