Information storage apparatus using semiconductor probe

摘要

The information storage apparatus includes a recording medium (10) and a head. The recording medium has an electrode layer (15), a ferroelectric film (13) that is stacked on the electrode layer, and a semiconductor layer (11) that is stacked on the ferroelectric film. The head has a semiconductor probe (21) for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed. <IMAGE>