发明名称 Semiconductor substrate used for vertical integration of integrated circuits comprises a first conductor strip on its front side, and a region formed by insulating trenches and electrically insulated from the substrate
摘要 Semiconductor substrate comprises a first conductor strip (3) on its front side (20); and a region (9) made from semiconductor material and electrically insulated from the substrate formed by insulating trenches (8). The conductor strip is electrically contacted with the rear side of the substrate via the region. Preferred Features: An integrated circuit (2) is provided in the region of the front side of the substrate and is in contact with a wiring surface. The region (9) is made from an electrically conducting semiconductor material, especially doped silicon, and has a circular, elliptical, rectangular or square cross-section.
申请公布号 DE10205026(C1) 申请公布日期 2003.05.28
申请号 DE2002105026 申请日期 2002.02.07
申请人 ROBERT BOSCH GMBH 发明人 FISCHER, FRANK;GRAF, ECKHARD
分类号 H01L21/768;H01L23/48;H01L23/485;H01L25/065 主分类号 H01L21/768
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