INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS,申请号EP20010954857-传众专利搜索

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发明名称	INDIUM GALLIUM NITRIDE CHANNEL HIGH ELECTRON MOBILITY TRANSISTORS
摘要
申请公布号	EP1314204(A1)	申请公布日期	2003.05.28
申请号	EP20010954857	申请日期	2001.07.23
申请人	ADVANCED TECHNOLOGY MATERIALS, INC.	发明人	REDWING, JOAN, M.;PINER, EDWIN, L.
分类号	H01L29/812;H01L21/338;H01L29/20;H01L29/778;(IPC1-7):H01L29/06;H01L21/335	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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