发明名称 |
Methods for CMOS semiconductor devices with selectable gate thicknesses |
摘要 |
The present invention discloses a method for obtaining layers, manufactured in the same device material, with different thickness or layer height. A specific example of such a process is a CMOS process comprising nMOS and pMOS devices with different gate electrode thickness. After forming the device material layer or gate electrode layer (2) disposable parts (4) are formed in selected regions (3) of this device layer (2). Preferably disposable parts are formed by doping the selected regions (3) to the required depth d. The as-deposited thickness t of this device (2) layer will be adjusted or modulated after the patterning of the individual devices by removing the disposable parts (4). <IMAGE> |
申请公布号 |
EP1315200(A1) |
申请公布日期 |
2003.05.28 |
申请号 |
EP20010204564 |
申请日期 |
2001.11.26 |
申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW |
发明人 |
JURCZAK, MALGORZATA;AUGENDRE, EMMANUEL;ROOYACKERS, RITA;BADENES, GONCAL |
分类号 |
H01L21/28;H01L21/3215;H01L21/8238;H01L27/092 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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