| 发明名称 |
Dielectric structure |
| 摘要 |
<p>Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.</p> |
| 申请公布号 |
EP1315407(A2) |
申请公布日期 |
2003.05.28 |
| 申请号 |
EP20020258032 |
申请日期 |
2002.11.21 |
| 申请人 |
SHIPLEY CO. L.L.C. |
发明人 |
ALLEN, CRAIG S.;RZEZNIK, MARIA ANNA;CAIRNS, S. MATTHEW |
| 分类号 |
C04B41/88;C23C18/18;C25D5/54;H01G4/06;H01G4/18;H01G4/20;H01L21/02;H01L21/288;H05K1/16;H05K3/18;(IPC1-7):H05K1/16;H01G4/005 |
主分类号 |
C04B41/88 |
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