Semiconductor device has opening with bottom defined by bonding pad connected to interconnection layer made of aluminum alloy, is formed on insulating films and buffer coat film

摘要

A multilayer interconnection structure has lower and upper interconnection layers (13,17,66,70) made of aluminum alloy and copper respectively. An opening (74) with bottom defined by a bonding pad (71) connected to the interconnection layer (17), is formed in the insulation films (63,67,72) and buffer coat film (73). A wire (75) is inserted in the opening and bonded to the bonding pad.