Semiconductor element used as a DRAM element comprises a semiconductor substrate, a dielectric layer, a silicon-germanium layer formed in an opening on the substrate, a cobalt silicide layer, a conformal cobalt layer, and a metal connection

摘要

Semiconductor element comprises a semiconductor substrate (10); a dielectric layer (20) arranged on the substrate and having an opening for exposing the substrate; a SixGe1-x layer (30) formed in the opening on the substrate; a cobalt silicide layer (52); a conformal cobalt layer (50) on the cobalt silicide layer and on the sides of the opening; and a metal connection arranged on the cobalt layer filling the opening. An Independent claim is also included for a process for the production of a metal contact for a storage element using the above semiconductor element. Preferred Features: The SixGe1-x layer is a doped SixGe1-x layer, n-doped SixGe1-x layer or a silicon-rich SixGe1-x layer. A diffusion region is formed in the substrate below the SixGe1-x layer.