发明名称 |
A contact for indium semiconductor devices incorporating gold solders |
摘要 |
The invention provides a semiconductor device, comprising a substrate comprising indium, an ohmic contact layer on the substrate, an indium diffusion barrier layer over the ohmic contact layer, and a layer selected from the group consisting of gold solder, gold solder precursor and mixtures thereof over the indium diffusion barrier layer and a method for making such a device. <IMAGE> |
申请公布号 |
EP1179836(A3) |
申请公布日期 |
2003.05.28 |
申请号 |
EP20010306774 |
申请日期 |
2001.08.08 |
申请人 |
AGERE SYSTEMS OPTOELECTRONICS GUARDIAN CORPORATION |
发明人 |
BARON, ROBERT ANTHONY;CHAKRABARTI, UTPAL KUMAR;DERKITS, GUSTAV EDWARD;MUTHIAH, RANJANIC |
分类号 |
H01L21/28;H01L21/285;H01L21/60 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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