发明名称 Semiconductor arrangement used in the production of label or chip card comprises semiconductor device having semiconductor path made from organic semiconductor and rewritable storage cell
摘要 Semiconductor arrangement comprises a semiconductor device having a semiconductor path made from an organic semiconductor and a rewritable storage cell based on the ferroelectric effect in a storage material. Preferably the storage material is an organic polymer having ferroelectric properties or an inorganic material having ferroelectric properties. The organic polymer is a fluorinated polyene, preferably a poly vinylidene fluoride. The inorganic material is a ferroelectric titanate or tantalate.
申请公布号 DE10156470(A1) 申请公布日期 2003.05.28
申请号 DE20011056470 申请日期 2001.11.16
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHMID, GUENTER;HALIK, MARCUS;KLAUK, HAGEN
分类号 G11C11/22;G11C13/02;H01L21/316;H01L21/8246;H01L27/105;H01L27/28;H01L51/05;(IPC1-7):H01L51/20;H01L51/30;H01L51/00;H01L27/24;H01L45/00 主分类号 G11C11/22
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