发明名称 |
Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substrates |
摘要 |
A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.
|
申请公布号 |
US6570256(B2) |
申请公布日期 |
2003.05.27 |
申请号 |
US20010910380 |
申请日期 |
2001.07.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CONTI RICHARD A.;DEV PRAKASH CHIMANLAL;DOBUZINSKY DAVID M.;EDELSTEIN DANIEL C.;LEE GILL Y.;LOW KIA-SENG;SHAFER PADRAIC C.;SIMPSON ALEXANDER;WRSCHKA PETER |
分类号 |
H01L21/28;H01L21/316;H01L23/532;H01L29/51;(IPC1-7):H01L23/48;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|