发明名称 |
Programming with floating source for low power, low leakage and high density flash memory devices |
摘要 |
The present invention relates to a flash memory array architecture comprising a plurality of flash memory cells arranged in a NOR type array configuration. Each of the plurality of flash memory cells have a source terminal coupled together to form a common source. The array architecture further comprises a common source selection component coupled between the common source of the array and a predetermined potential. The common source selection component is operable to couple the common source to the predetermined potential in a first state and electrically isolate or float the common source from the predetermined potential in a second state, thereby reducing leakage of non-selected cells associated with the activated bit line during a program mode of operation.
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申请公布号 |
US6570787(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US20020126330 |
申请日期 |
2002.04.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG ZHIGANG;YANG NIAN;GUO XIN |
分类号 |
G11C16/12;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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