发明名称 |
Semiconductor device fabrication using a photomask designed using modeling and empirical testing |
摘要 |
A method of fabricating a semiconductor device is outlined in FIG. 3. An ideal (or desired) pattern of a layer of the semiconductor device is designed (305). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e.g., aerial image effects (315, 320). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors (304). The second pass corrected pattern can be used to build a photomask (345). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).
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申请公布号 |
US6571383(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US20000562700 |
申请日期 |
2000.04.28 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
BUTT SHAHID;HAFFNER HENNING;FRANKOWSKY BEATE |
分类号 |
G03F1/14;(IPC1-7):G06F17/50;G03C5/00;G06K9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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