发明名称 DRY ETCHING APPARATUS FOR SEMICONDUCTOR FABRICATION
摘要 PURPOSE: A dry etching apparatus for semiconductor fabrication is provided to prevent a damage of an outer ring due to the expansion of a clamp ring by forming the clamp ring and the outer ring with a vespel insulator. CONSTITUTION: A reaction gas is injected into the inside of a process chamber(100). An electrostatic chuck(120) is located at a lower side of the inside of the process chamber. A wafer(140) is loaded on an upper surface of the electrostatic chuck. A plurality of fingers(201) are formed on an inner circumference of a clamp ring(200) in order to support an edge portion of the wafer loaded on the electrostatic chuck. An outer ring(210) is formed on an outer circumference of the clamp ring in order to support the clamp ring. The clamp ring and the outer ring are formed with the same material.
申请公布号 KR20030041561(A) 申请公布日期 2003.05.27
申请号 KR20010072394 申请日期 2001.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, GYU HYEON
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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