发明名称 Gate device with raised channel and method
摘要 A method of forming a gate device which includes an elongated projection on a substrate. The elongated projection protrudes from a surrounding area of the substrate and includes an access channel for the gate device. A first terminal and a second terminal are formed and coupled to the access channel in the elongated projection. A gate structure is operable to control the access channel to selectively couple the first terminal to the second terminal.
申请公布号 US6569733(B2) 申请公布日期 2003.05.27
申请号 US20010001441 申请日期 2001.10.30
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MCKEE JEFFREY A.
分类号 G11C11/24;H01L21/02;H01L21/8242;H01L27/02;H01L27/108;H01L27/12;(IPC1-7):H01L21/824 主分类号 G11C11/24
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