发明名称 |
Gate device with raised channel and method |
摘要 |
A method of forming a gate device which includes an elongated projection on a substrate. The elongated projection protrudes from a surrounding area of the substrate and includes an access channel for the gate device. A first terminal and a second terminal are formed and coupled to the access channel in the elongated projection. A gate structure is operable to control the access channel to selectively couple the first terminal to the second terminal.
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申请公布号 |
US6569733(B2) |
申请公布日期 |
2003.05.27 |
申请号 |
US20010001441 |
申请日期 |
2001.10.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCKEE JEFFREY A. |
分类号 |
G11C11/24;H01L21/02;H01L21/8242;H01L27/02;H01L27/108;H01L27/12;(IPC1-7):H01L21/824 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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