发明名称 |
Plasma etching method to form dual damascene with improved via profile |
摘要 |
A method for plasma etching a semiconductor feature to improve an etching profile including providing a semiconductor wafer comprising a first feature opening anisotropically etched though a thickness portion of at least one dielectric insulating layer; anisotropically etching a second feature opening overlying and at least partially encompassing the first feature opening according to a reactive ion etch (RIE) process to leave an unetched portion surrounding a first feature opening portion at about a bottom portion level of the second feature opening; and, plasma treating the first and second openings with a plasma formed of a mixture of oxygen and nitrogen plasma source gases including an applying an independently variable RF bias power source to the semiconductor wafer to remove the unetched portion.
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申请公布号 |
US6569777(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US20020263309 |
申请日期 |
2002.10.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
HSU JYH-SHIOU;CHANG FENG-YUEH;HSIN PIN-YI |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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