| 摘要 |
PURPOSE: To provide a semiconductor memory in which precharging of bit lines is conducted at a high speed and in a precise manner. CONSTITUTION: The semiconductor memory is provided with a pair of bit lines to which a plurality of memory cells is connected, a plurality of precharging circuit which are used in order to precharge the bit line pair to a first voltage and a bit line precharge voltage generator which supplies a precharge voltage to the precharge circuits. The bit line precharge voltage generator is provided with a precharge voltage generating circuit 4200 which generates the first voltage and supplies the voltage to the precharge circuits, a first capacitor 200, a charging means 201 which charges the first capacitor and transfer gate circuits (202, 203 and 204) which control the connection/disconnection of the first capacitor and the precharge circuits. The transfer gate circuits are controlled to connect the first capacitor and the precharge circuits during the precharging of the bit lines.
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