| 发明名称 |
Graded composition diffusion barriers for chip wiring applications |
| 摘要 |
A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film.
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| 申请公布号 |
US6569783(B2) |
申请公布日期 |
2003.05.27 |
| 申请号 |
US20020036476 |
申请日期 |
2002.01.07 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
UZOH CYPRIAN E.;EDELSTEIN DANIEL C.;SIMON ANDREW H. |
| 分类号 |
H01L21/22;C23C14/00;C23C14/06;C23C14/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/22 |
| 代理机构 |
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