| 摘要 |
PURPOSE: A magnetoresistive element and a magnetic memory device are provided in that reduction in the MR change is made low even when an applied voltage is increased to obtain required output voltage, that have no problem that an output is gradually decreased owing to rotation of a part of magnetic moments in the magnetization pinned layer by repeated writing, and in that a reversal magnetic field for reversing the magnetic moments in the ferromagnetic layer is freely designed. CONSTITUTION: The magnetoresistive element(10) includes a ferromagnetic dual tunnel junction where the first ferromagnetic layer(12), the first dielectric layer(13), the second ferromagnetic layer(14), the first nonmagnetic layer(11), the third ferromagnetic layer(16), the second nonmagnetic layer(17), the fourth ferromagnetic layer, the second dielectric layer and the fifth ferromagnetic layer are stacked. The second and the third and the fourth ferromagnetic layer being adjacent each other are anti-ferromagnetically coupled. The first and the fifth ferromagnetic layer are Co-based alloy or Co-based alloy/Ni-Fe alloy/Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the fifth ferromagnetic layer. |
