| 摘要 |
A method and apparatus for performing read and write operations in matrix-addressed memory array of memory cells is described. The memory cells comprising an electrically polarizable material exhibiting polarization remanence, in particular and electret or ferroelectric material, where a logical value stored in a memory cell is represented by an actual polarization state in the memory cell. The degree of polarization in the polarizable material is limited during each read and write cycle to a value defined by a circuit device controlling the read and write operations, with said value ranging from zero to an upper limit corresponding to saturation of the polarization and consistent with predetermined criterta for a reliable detection of a logic state of a memory cell. |
