发明名称 |
Field emission electron source and fabrication process thereof |
摘要 |
A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.
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申请公布号 |
US6570305(B1) |
申请公布日期 |
2003.05.27 |
申请号 |
US19990339226 |
申请日期 |
1999.06.24 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
URAYAMA MASAO;UDA KEIICHIRO;YANO SEIKI;INOUE YOSHIO |
分类号 |
H01J9/02;H01J1/304;H01J3/02;(IPC1-7):H01J1/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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