Silicon epitaxial wafer and production method therefor

摘要

A surface roughness distribution in the surface of a silicon epitaxial wafer is made uniform by optimizing a temperature distribution in the surface of a susceptor used in a vapor phase thin film growth apparatus. The susceptor is not supported by its center of the rear surface thereof, but only the peripheral portion thereof is supported using vertical pins respectively provided at the far ends of spokes radially branched from a rotary shaft. The susceptor is constituted so that a difference in temperature between the maximum and minimum in the surface of a silicon wafer is suppressed to a value equal to or less than 7° C. Hence, a surface roughness distribution in the surface of the silicon epitaxial wafer can be suppressed to a value equal to or less than 0.02 ppm.