发明名称 |
Effekttransistorer för radiofrekvenser |
摘要 |
A field effect transistor is made on a chip comprising a SiC-substrate. The transistor includes a plurality of densely stacked parallel transistor cells occupying totally a rectangular area. Each transistor cell has parallel strip-shaped regions forming the electrodes and active areas of the cell and each inner cell shares its drain and sources electrodes with neighbouring cells. In order to give a good power dissipation allowing an electrical high power of the transistor, the rectangular area has a very elongated shape and specifically it should have a width not larger than substantially 50 mum. In the rectangular area all the transistor cells have their strip-shaped regions located in parallel to short sides of the rectangular area and are generally very short considering the length of the rectangular area. Thus specifically also each cell has a length not larger than substantially 50 mum. The distances from the long sides of the rectangular area to the edges of the chip should be at least 50% and preferably 60% of the thickness of the chip to allow a good thermal flow out of the active rectangular area. A plurality of such very elongated active areas can be located on a single chip. |
申请公布号 |
SE520109(C2) |
申请公布日期 |
2003.05.27 |
申请号 |
SE20000001815 |
申请日期 |
2000.05.17 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON |
发明人 |
ANDREJ LITWIN |
分类号 |
H01L29/06;H01L29/24;H01L29/812;(IPC1-7):H01L23/367;H01L29/08 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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